PART |
Description |
Maker |
HY5DU283222F HY5DU283222F-26 HY5DU283222F-33 HY5DU |
GDDR SDRAM - 128Mb 128M(4MX32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
HY5DV281622DT HY5DV281622DT-33 HY5DV281622DT-36 HY |
128M(8Mx16) GDDR SDRAM GDDR SDRAM - 128Mb
|
Hynix Semiconductor
|
K4D26323QG K4D26323QG-GC33 K4D26323QG-GC25 K4D2632 |
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
HY5DU573222AFM-36 HY5DU573222AFM-28 HY5DU573222AFM |
GDDR SDRAM - 256Mb
|
Hynix Semiconductor
|
HY5DU113222FMP-25 HY5DU113222FMP-22 HY5DU113222FMP |
GDDR SDRAM - 512Mb
|
Hynix Semiconductor
|
HY5DU281622ET HY5DU28162 HY5DU281622ET-4 HY5DU2816 |
128M(8Mx16) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
HY5DU113222FM-2 HY5DU113222FM-22 HY5DU113222FM-25 |
512M(16Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
W9412G2CB |
1M × 4 BANKS × 32 BITS GDDR SDRAM
|
Winbond
|
K4D261638F-TC33 K4D261638F-TC25 K4D261638F-TC40 K4 |
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存 8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. DiCon Fiberoptics, Inc.
|
W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM Double Data Rate architecture; two data transfers per clock cycle 4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond WINBOND ELECTRONICS CORP
|
HYS64V4200GDL-7.5 HYS64V8220GDL HYS64V4200GDL-8-X |
x64 SDRAM Module 3.3 V SDRAM Modules(3.3 V 同步动态RAM模块) 3.3 V SDRAM Module(3.3 V SDRAM 模块) 4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA144
|
SIEMENS AG INFINEON TECHNOLOGIES AG
|
W982516BH-75 W982516BH-75I W982516BH-75L |
Industrial SDRAM Low Power SDRAM 4M X 4 BANKS X 16 BIT SDRAM
|
Winbond Electronics
|